Abstract
Pt/n-type GaN Schottky photodiodes with large active areas which exhibit low leakage currents are fabricated. Reverse bias leakage currents of 2.7 nA for a 1 cm2 diode and 14 pA for a 0.25 cm2 diode both at −0.5 V bias are reported. External quantum efficiency measurements between the spectral range 50 to 500 nm gave a peak responsivity of 77.5 mA/W at 320 nm for a 0.25 cm2 diode, corresponding to a spectral detectivity, D*=1.5×1014 cmHz1/2W−1.
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