Abstract

It is well known that different bonding networks could bring a wide variety of physical properties to the materials although they hold analogous element and structure features. In this paper, we present a first-principles calculation about the lattice dynamics and phonon transport properties of two-dimensional (2D) boron-rich material BxN (x = 2, 3, and 5). The calculations show that besides the obvious differences in electrical properties compared to h-BN, the special bonding environment in these boron-rich materials also results in quite different phonon behaviors, where their thermal conductivity is at least one order of magnitude smaller than that of h-BN. By performing bonding and lattice dynamics analysis, we reveal that such dramatic reduction of conductivity is attributed to the synergistic effect of weak bond strength (low phonon group velocity) and complex bonding network (strong phonon scattering). Relative regular residual analysis further indicates that the four-phonon process is limited in BxN, and the three-phonon scattering is sufficient to describe their anharmonicity. Starting from the basic physical mechanism, the present study sheds light on the thermal transport properties of 2D boron-rich BxN compounds, which could provide useful insight for their widespread applications in thermal management.

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