Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Interlayer

Chongnan Liao,Xiangheng Xiao,Xuming Zou,Changzhong Jiang,Kai Zhang,Yuechan Kong,Lei Liao,Wen-Wei Wu,Jingli Wang,Tangsheng Chen,Chun-Wei Huang

doi:10.1109/led.2015.2486818

Low Interface Trap Densities and Enhanced Performance of AlGaN/GaN MOS High- Electron Mobility Transistors Using Thermal Oxidized Y<sub>2</sub>O<sub>3</sub> Interlayer

Chongnan Liao, Xiangheng Xiao + Show 9 more

https://doi.org/10.1109/led.2015.2486818

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Journal: IEEE Electron Device Letters	Publication Date: Dec 1, 2015
Citations: 22

Affiliation: Wuhan University, National Yang Ming Chiao Tung University

#Metal–oxide–semiconductor High-electron Mobility Transistors #Negative Bias Stress + Show 8 more

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Abstract

AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors (MOS-HEMTs) with Y2O3 interlayer have been investigated to improve the interface quality. With the HfO2/Y2O3 stack gate dielectrics, the devices show a saturated drain current density of up to $\sim 943$ mA/mm. Meanwhile, the pulsed $I_{d}$ – $V_{g}$ measurement indicates interface traps are as low as $5.2\times 10^{{ {11}}}$ cm $^{ { {-2}}}$ , and the pulsed- $IV$ measurement exhibits great resistance to current collapse. Furthermore, the devices also present good reliability under negative bias stress. Therefore, the interface engineering based on Y2O3 has a potential to open up a new avenue to high-performance AlGaN/GaN MOS-HEMTs.

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