Abstract
The application of thin (∼1000–5000 Å) layers of low-temperature (LT) molecular beam epitaxially (MBE) grown AlGaAs as current blocking layers is investigated. Data are presented regarding the current–voltage characteristics of resistors incorporating such layers, and it is shown that layers as thin as 1000 Å are highly resistive when biased to less than 8 V. Lateral current confinement is demonstrated for both surface-emitting light-emitting diodes and vertical-cavity surface-emitting laser (VCSEL) diodes through the use of MBE regrowth over a patterned layer of LT AlGaAs. The VCSEL devices exhibit low series resistance with only 1.8 V at a threshold current of 1.9 mA for 10-μm-diam devices.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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