Abstract
The noise characteristics at low frequencies are studied for various planar dc SQUIDs made of junctions with different barrier materials of a-Si, aluminum oxide, and niobium oxide. It is found that fluctuations of the parameters of individual junctions contribute to the flux noise of the SQUIDs in a magnitude of the same order with the apparent flux noise. The magnitude of the flux noise due to the parameter fluctuations depends on the barrier material and on the inductance parameter βL . We have observed a telegraph noise in the voltage time trace and a Lorentzian in the voltage power spectrum for a current-biased SQUID. As a source of the parameter fluctuations, capture and emission of electrons at the trapping sites in the barrier are indicated.
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