Abstract
We have examined low frequency noise in GaAs/Al x Ga 1− x As single interface heterostructures in the integral quantum Hall regime. We have focused on the bias dependence of the noise and of the differential magnetoresistance, d V x /d I x . We find that the current dependence of the noise can differ significantly from the dependence expected from bulk resistance fluctuations, and that the differential magnetoresistance has distinct structure. These phenomena are related to the previously observed asymmetry in the Shubnikov-de Haas oscillations.
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