Different Behaviour of Integral and Fractional Quantum Hall Plateaus in GaAs-AlxGa1−xAs Heterostructures Under Back-Gating and Illumination

P M Koenraad,J A A J Perenboom,J P Cuypers,C T Foxon,F A P Bloom,J H Wolter,S J R M Spermon

doi:10.1007/978-3-642-83810-1_24

Different Behaviour of Integral and Fractional Quantum Hall Plateaus in GaAs-AlxGa1−xAs Heterostructures Under Back-Gating and Illumination

P M Koenraad, J A A J Perenboom + Show 5 more

https://doi.org/10.1007/978-3-642-83810-1_24

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Publication Date: Jan 1, 1989

Affiliation: Eindhoven University of Technology, Philips (United Kingdom)

#Fractional Quantum Hall Plateaus #Integral Quantum-Hall Effect + Show 8 more

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Abstract

We measured the Shubnikov-de Haas resistivity of a 2-dimensional electron-gas (2DEG) in GaAs/A1GaAs heterojunctions and compared measurements in which for the same sample the electron density was increased to the same value either by back-gating or illumination. The electron-impurity interaction is different in these two cases. We observed that the integral and fractional Quantum-Hall (QH) plateaus behave quite differently in these two cases. We conclude that the integral Quantum-Hall Effect (IQHE) becomes stronger for stronger electron-impurity interaction while the fractional Quantum-Hall Effect (FQHE) is destroyed. This is consistent with the idea that the IQHE is due to electron-impurity interaction while the FQHE is based on electron-electron interaction.

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