Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes

Abstract

We report the first experimental study of low-frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes at 300 K and 77 K. At room temperature, the current noise spectral density, SI, depends on frequency as 1/f over the entire current range and tends to the Nyquist noise when the frequency increases. At small reverse currents Irb ≤ 3 × 10−5 A, SI is proportional to at higher currents this dependence changes to SI ∼ With temperature decrease down to 77 K, SI becomes proportional to while the reverse current decreases and the differential resistance grows by 4 orders of magnitude. The noise was also studied in the photovoltaic mode at 100 K, where SI is proportional to We conclude that at 100 K, the Nyquist noise is dominant and can be used for estimations of the specific detectivity of P-InAsSbP/n-InAs diodes.