Abstract
Low-frequency noise in n-GaAs layers grown by molecular beam epitaxy has been systematically studied for various carrier concentrations and device dimensions. The noise decreases linearly with an increase in total carriers and layer thickness. The frequency dependence of the noise varies at a rate of ƒ−1.5 in the devices with SnAu contacts, and at the rates of ƒ−1.2 to ƒ−2.0 in those with AuGe contacts. SnAu ohmic contacts have noise levels 20 dB lower than those of AuGe contacts. Surface cap layers either doped to n- or p-type have little effect on the overall frequency dependence of the noise.
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