Abstract
Low frequency noise in CdSe thin-film transistors (TFTs) has been studied, for the first time, over a wide range of gate and drain biases, temperatures and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range for Si TFTs and amorphous Si. The absence of the illumination effect on the relative noise spectra of drain current fluctuations reveals that the nature of the 1/f noise in CdSe is probably different from that in Si and GaAs.
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