Abstract
Measurements of the low-frequency noise in several types of AlSb/InAs HEMTs are reported. The slope of the noise level with frequency is close to ideal 1/f for some types, while others have significant generation-recombination components. The Hooge parameter, αH, for all the devices is in the range between 10-3 and 10-2 based on floating-gate measurements at low drain voltage.
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