Abstract
Nb2O5films were deposited with pulsed DC magnetron sputter which is versatile and provides the ability to deposit thin film of oxide compounds with high deposition rate. Current measurement data from the metal-insulator-semiconductor (MIS) structure followed Schottky emission mechanism andreverse current characteristics were analyzed with oxygen flow rate variation. Low frequency noise measurements have been carried out with MIS samples at the forward conduction region. The experimental noise data have been successfully explained by the random walk model. The effect of O2flow rate of deposition process on low frequency noise has also been investigated and analyzed.
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