Abstract
This paper describes the low-frequency (LF) noise behavior of silicon-on-insulator (SOI) n- and p-MOSFETs, processed in a 1 μm SOI CMOS technology on SIMOX substrates, which have been subjected to γ-irradiation to a total dose of 100 krad (Si). As will be shown, the post-irradiation input-referred noise spectral density is a sensitive function of the technological details and in particular of the edge-isolation scheme used. In general, the irradiation response of the noise correlates with the degradation of the static current-voltage ( I-V) characteristics both in linear operation and in saturation. For instance, the empirical relationship which exists between the transconductance and the LF noise spectral density before irradiation is maintained afterwards. As is shown, the LF noise has a strong potential as a predictive tool for the irradiation response of SOI MOSFETs. Finally, the impact of irradiation on the kink related excess LF noise overshoot in partially depleted SOI n-MOSFETs is demonstrated and discussed.
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