Abstract
Resistive-random-access-memory (RRAM) devices are considered to be one of the most potential candidates of next generation emerging memory technologies due to their excellent device properties, such as high density, low power, low voltage, and high speed. RRAM features simple metal–insulator–metal (MIM) structures and is fully compatible with traditional CMOS fabrication processes. Low-frequency noise (LFN) measurement is a technique to characterize electrically the trap-assisted conduction processes in dielectrics. In this work, we report the LFN characteristics of Hf/HfO2-based bipolar RRAM and investigate the current conduction mechanism and internal physics.
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