Abstract
Noise spectroscopy has been used to assess the quality of the active layers of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices using transmission line model structures. Noise spectra were studied as a function of insulator thickness. LT-Al0.3Ga0.7As samples and a 500 A thick LT-GaAs sample exhibited 1/f noise. The noise parameter αlatt was found to be of the order 10–4 for these samples. 2000 A LT-GaAs samples exhibited 1/f3/2 noise with 500 Hz corner frequency.
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