Abstract
In recent years, with an extensive use of InGaN light-emitting diode (LED), how to assess the LED quality and further improve the LED reliability are very important. In this paper, the noise spectrum measurement techniques are used to assess the electrostatic discharge tolerance and quality of InGaN LED devices. Experimental results show that the noise spectrum measurement distinguishing the LED device reliability is more effective than the current-voltage curve measurement. In the evidence, emission microscope, scanning electron microscope, and transmission electron microscopy images show that the noise source and the cause of failure of the LED device are attributed by the poor quality of the SiO2 and Indium Tin Oxide (ITO) interface.
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