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Abstract
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter α and the exponent γ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices.
Highlights
Intensive research interest has been focused on resistive switching (RS) memory devices due to the advantages of non-volatility, high scalability, high integration, and low power consumption, which could be attributed to the simple metal-insulator-metal (MIM) configuration and to their compatibility with the existing complementary metaloxide-semiconductor (CMOS) technology [1,2,3,4,5]
Numerous studies on magnetic tunnel junctions (MTJs) with a thin oxide tunnel barrier have demonstrated that both RS and MR effects can be achieved via electrical control of the resistance states [15,16,17]
Since the structure of this device is identical to a MTJ, the bottom NiFe/CoFe acted as the soft ferromagnetic (FM) electrode and the top CoFe as the hard FM electrode
Summary
Intensive research interest has been focused on resistive switching (RS) memory devices due to the advantages of non-volatility, high scalability, high integration, and low power consumption, which could be attributed to the simple metal-insulator-metal (MIM) configuration and to their compatibility with the existing complementary metaloxide-semiconductor (CMOS) technology [1,2,3,4,5]. Despite the fact that RS between the high resistance state (HRS) and low resistance state (LRS) in a variety of insulators, such as perovskite and organics [6,7], realizes the basic function of memory devices, binary metal oxides including TiO2, Al2O3, NiO, and ZnO, among others, have advantages over other complex materials in terms of simplifying the manufacturing process and compatibility of semiconductor processing [1,8,9]. It has been reported that the nearly stoichiometric Al2O3 layer could act as a diffusion barrier for oxygen ions, whereas the oxygen-deficient AlOx layer displays characteristics of charge trapping/de-trapping properties similar to perovskite-type complex oxides [19,20]. We report an extensive study on the 1/f LFN characteristics of the AlOx-based RS memory devices to address the charge transport dynamics by analyzing the noise power spectrum density (PSD) through Hooge’s empirical model [23,24]
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