Abstract
The generation-recombination noise spectral density and the resistance of an overcompensated gold-doped silicon p+-p−-p+ resistor with boron dopant concentration Na=1.0×1015 cm−3 are measured as a function of temperature in the low field regime. The temperature dependence of the plateau values of the noise spectra and the resistance are used to extract the trap energy, the hole capture cross section, and the spin degeneracy factor. The values so obtained are in good agreement with published data in the literature, indicating that this method is an accurate technique to investigate deep-level properties.
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