Abstract
The generation-recombination noise spectral density and the resistance of an overcompensated gold-doped silicon p+-p−-p+ resistor with boron dopant concentration Na=1.0×1015 cm−3 are measured as a function of temperature in the low field regime. The temperature dependence of the plateau values of the noise spectra and the resistance are used to extract the trap energy, the hole capture cross section, and the spin degeneracy factor. The values so obtained are in good agreement with published data in the literature, indicating that this method is an accurate technique to investigate deep-level properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
