Abstract
Results on the magnetoresistance (MR) effect in Co-based amorphous glass-coated microwires with nearly zero magnetostriction and no granular structure are reported. MR measurements have been performed in parallel and perpendicular configurations, in both low field and high field regimes. The results show that high field resistance variations are caused by the corresponding magnetization processes in both parallel and perpendicular configurations. In case of low parallel field, no resistance variation has been emphasized. A sharp MR response was observed in case of a perpendicularly applied low field and it was attributed to the interdomain wall between the inner core and the outer shell of such microwires. The sharpness of the low field MR peak can be controlled through the microwire dimensions. The results bring new information about the domain structure of amorphous microwires and open up new application opportunities for these materials.
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