Abstract
Colossal in-plane anisotropic magnetoresistance (AMR) of >16 000% has been engineered in spatially confined La0.3Pr0.4Ca0.3MnO3 films. Recalling that typical AMR values in films are only a few percent, these results mark an astonishing increase that might potentially lead to fabrication of manganite-based switching and sensor devices. The unique colossal behavior is discussed within the context of anisotropic domain growth.
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