Abstract
The lattice-disorder-induced changes in the magnetoresistivity and the magnetoresistive anisotropy of epitaxial ion-beam-milled La0.65Ca0.35MnO3 films were investigated. The results suggest that, for films less than 20nm thick, an increase of the magnetoresistivity and a reduction in the magnetoresistive anisotropy of the ion-beam-milled films are governed mostly by the point-defect-induced deformation, in contrast to the as-grown films where an increase of both the magnetoresistivity and the magnetoresistive anisotropy is determined by the epitaxial strain.
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