Low-energy ion beam effects on the molecular beam epitaxical growth of III-V compound semiconductors: A Monte Carlo simulation study

Abstract

Effects of low-energy ion beam on the growth rate, cluster dynamics, and evolution of surface morphology in molecular beam epitaxical growth of a III-V compound semiconductor are examined via Monte Carlo simulations. It is shown that for beams incident at a shallow angle (<10°), the effects can vary significantly with the azimuthal orientation. It is also demonstrated that use of an ion beam can lead to improved surface morphology in the case of growth of alloys.