Abstract
InGaAsSb alloys were grown within the solid-phase miscibility gap, lattice matched to InP (100) substrates, using ion-assisted deposition. The alloy structure and properties were strongly dependent upon the energy E of Ar ions bombarding the growing film. Films deposited with E≤16 eV exhibited multiple (400) x-ray diffraction peaks and relatively low electron mobilities, indicating that there was significant alloy decomposition. Increasing E to 19–21 eV yielded single, sharp (400) x-ray peaks and increased the electron mobility, showing that ion irradiation suppressed decomposition. E≳22 eV resulted in ion damage as indicated by decreased mobilities and broadening of the x-ray peaks.
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