Interface state densities, low frequency noise and electron mobility in surface channel In 0.53Ga 0.47As n-MOSFETs with a ZrO 2 gate dielectric

Abstract

This paper reports on an investigation of interface state densities, low frequency noise and electron mobility in surface channel In 0.53Ga 0.47As n-MOSFETs with a ZrO 2 gate dielectric. Interface state density values of D it ∼ 5 × 10 12 cm −2 eV −1 were extracted using sub-threshold slope analysis and charge pumping technique. The same order of magnitude of trap density was found from low frequency noise measurements. A peak effective electron mobility of 1200 cm 2/Vs has been achieved. For these surface channel In 0.53Ga 0.47As n-MOSFETs, it was found that η parameter, an empirical parameter used to calculate the effective electric field, was ∼0.55, and is to be comparable to the standard value found in Si device.