Abstract
Applications of low energy ion scattering and low energy atom scattering spectroscopy have been described. Time of flight impact-collision ion scattering (TOF-ICISS) has been used to investigate the heteroepitaxial growth of 3ML of FCC elements on Ni(111) and Cu(111) over a wide temperature range from 300K through 700K. There were two different types of epitaxial growth; FCC(111)[112¯]//Sub(111)[112¯] and FCC(111)[1¯1¯2]//Sub(111)[112¯]. FCC represents Au, Ag, Pb, Pd and Sub represents Ni or Cu. Relative amounts of these two growth modes show oscillatory dependence on the substrate temperature during deposition. However, it is not understood the physics behind this behavior. TOF-ICISS is quite useful to know the surface structure of epitaxy. A low energy Ne atom scattering system combined with a time-of-flight spectrometer for insulator surface structural analysis. Insulator surface structure is difficult to study because of charging effects during electron or ion beam bombardment. It has a potential for insulator surface structural analysis.
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