Abstract
It is shown that the incident electron beam in high-resolution electron energy loss spectroscopy (HREELS) studies of (CH 3) 3Al chemisorbed on the (100) surfaces of GaAs and InSb leads to electron beam induced dissociation of adsorbed CH 3 groups. Vibrational modes associated with surface CH 2 species appear in spectra recorded at high electron beam energies with a threshold of 10 eV. Dissociation cross-sections for CH 2 production have been calculated and found to be very large, varying between 2×10 −16 cm 2 at 30 eV and 7×10 −17 cm 2 at 20 eV. It is suggested that an electron impact mechanism is responsible for dissociation and the high cross-sections reflect a relatively long lifetime for the excited states which are not quenched efficiently for adsorption on semiconductor surfaces.
Published Version
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