Abstract
Size dependent current-voltage measurements were performed on InGaAs quantum dot active region mesa diodes and the surface recombination velocity was extracted from current density versus perimeter/area plots using a diffusion model. An effective surface recombination value of 5.5 × 104 cm/s was obtained that can be reduced by more than an order of magnitude by selective oxidation of Al0.9Ga0.1As cladding layers. The values are three times smaller than those obtained for a single quantum well. The effect of p-type doping in the active region was investigated and found to increase the effective surface recombination.
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