Abstract
We have successfully demonstrated a low-driving-voltage electro-optic (EO) modulator using newly developed KTa1-xNbxO3 (KTN) buried waveguides. We prepared high-quality and large KTN crystals. The crystals exhibited a large quadratic EO coefficient of 4.8×10-15 m2/V2 at 1.55 µm. The KTN crystals also exhibited a very large linear EO effect, for example 600 pm/V at a biased potential of 60 V/mm, which is twenty times larger than the r33 of LiNbO3. The waveguide layers for the core and cladding were formed by liquid phase epitaxy techniques on the KTN crystals. The propagation loss was less than 0.5 dB/cm and the polarization dependent loss was less than 0.1 dB/cm. The EO modulators had a low Vπ of <2.5 V (4.0-V biased potential, l=6 mm) and a fast response of 3 GHz.
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