Low doping in-situ strategy leading to polysilicon based TFTs exhibiting high stability under stress effects and enhanced electrical performances

Abstract

In the present work, we investigate the effect of low phosphorus doped polysilicon thin films. These later are deposited on glass substrates by low pressure chemical vapor Deposition (LPCVD) technique and are in situ doped with phosphine adjunction to silane. Doping levels are reported by the phosphine to silane ratio Γ varying from 0 (undoped layer) to heavily doped layer almost 1.2 × 10–3. Films are characterized by different techniques as Photothermal Deflection Spectroscopy (PDS), photoluminescence measurements and x-ray diffraction of polycrystalline layers. The last one reveals that doping concentration giving modification in crystallite size and presence of microstrain, so a clear reduction in the Eg value was observed for the slightest doped layer (Γ = 3.7 × 10–7) by comparaison with the undoped one ((Γ = 0). Results give evidence of an optimum doping level to obtain higher polysilicon films quality. Polysilicon film quality has been correlated to phosphorus doping levels. Thin film transistors (TFTs) are fabricated on glass substrate using a top gate four mask process at low temperature (<600 °C). Electrical characterizations highlight significant improvements in the TFTs performances using slightly doped film instead of undoped one as active layer. Based on Levinson’s model, density of states within the grain boundaries is also found to be the lowest. Stability under stress is enhanced too. For slightly doped films, electrical characterizations indicate that both threshold voltage and density of states NT within the grain boundaries have their lowest values. Although, the field effect mobility μ records its highest values. Additionally, low doping levels enhances the TFT stability under stress. As a result, the in situ low doping strategy opens the way to manufacture polysilicon electronic devices exhibiting high electrical performances and a rather high stability under stress effects.