Abstract
Low-doped (∼1016 cm-3) and low-compensated p-type AlGaAs layers grown by metalorganic chemical vapor deposition (MOCVD) were studied to determine the optimal growth conditions for p-type buffer layers in GaAs field-effect transistors (FETs). Good reproducibility of doping control was confirmed with the use of an intrinsic carbon doping method. As the growth conditions were varied, significant changes in the compensation ratio of p-type AlGaAs layers were observed. While the Al0.15Ga0.85As layer with a compensation ratio of 0.4 exhibited a hole mobility of 142 cm2/V·s, a larger hole mobility of 170 cm2/V·s was obtained for the sample with a compensation ratio of 0.1. The growth condition of high V/III ratio and a low growth temperature are preferable for the growth of low-doped and low-compensated p-type AlGaAs buffer layer.
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