Abstract
Elemental indium doping of GaAs melts to a concentration in the 10 20 cm -3 range was found to be highly effective in reducing dislocation densities in large diameter GaAs crystals grown by the high-pressure liquid encapsulated Czochralski technique. Nominally 50 mm diameter 〈 100 〉-grown crystals exhibit dislocation densities of less than 500 cm -2 over 80% of the central crystal diameter compared to densities greater than 10 4 cm -2 in undoped GaAs crystals. In other respects, In-doped GaAs grown from stoichiometric or slightly As-rich melts are indistinguishable from undoped GaAs, showing stable resistivities in the 10 7 to 10 8 ohm cm range, measured mobilities approaching 5000 cm 2/V·s and only slightly modified 29Si implantation characteristics.
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