Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges

Abstract

AbstractHybrid perovskites have attracted considerable attention due to their excellent optoelectronic properties and facile processing. Beyond their wide usage in various energy‐related devices and optoelectronic applications, in particular photovoltaic cells, these materials have also been employed as active candidates in field‐effect transistors (FETs). However, the low stability of these materials is still a substantial challenge for their applications and commercialization. Low‐dimensional (two‐ or quasi‐two‐) perovskites, which are formed by introducing larger organic amine groups into the perovskite structure, not only offer great potential for the development of high stability devices, but also achieve higher field‐effect mobility due to the low ion migrations at room temperature. To date, the emerging low‐dimensional perovskite FETs have already gained unprecedented developments. This review mainly summarizes and evaluates the recent progress on low‐dimensional perovskite FETs and proposes solutions for the possible challenges. First, along with the detailed comparisons, the advantages of low‐dimensional perovskites that can overcome the demerits of conventional 3D perovskites for FETs are presented in detail. Thereafter, the achievements and development of low‐dimensional perovskite‐based FETs are briefly reviewed, followed by the discussion of field‐effect mobility and other challenges and opportunities of low‐dimensional perovskites for FETs. Finally, a summary and outlook are given.