Halide Perovskites With Ambipolar Transport Properties for Transistor Applications

Abstract

Recently, halide perovskites have attracted considerable attention as newly emerging semiconducting materials because of their excellent optoelectronic properties, low cost, and facile processing. These features make halide perovskites attractive for use in high-efficiency energy-related devices and optoelectronic applications, including photovoltaic cells, photodetectors, light-emitting diodes, and lasers. Beyond their wide usage in various energy and optoelectronic technologies, these materials are also promising candidates in transistor applications because of their state-of-the-art carrier transporting features, particularly their ambipolar characteristics and high charge carrier mobilities. Field-effect transistors based on halide perovskites with various structures and dimensions have already been developed; however, the low stability and ion migration issues of these materials are still major challenges that need to be addressed to realize their further applications and commercialization. This chapter mainly summarizes the recent progress of halide perovskite transistor devices, with an emphasis placed on detailed discussions of their ambipolar transport features. First, following a brief introduction of halide perovskites, the advantages of their charge transport behaviours for transistors are presented in detail. Thereafter, the development of halide perovskite transistors is systematically reviewed. The challenges and further opportunities of halide perovskite transistor applications are then discussed. Finally, a summary and outlook for transistors containing halide perovskites are outlined.