Abstract

ABSTRACTIn this review, the primary focus is the recent advances in the development of freestanding inorganic crystalline semiconductors and their manipulation technology for flexible optoelectronic applications. We firstly cover the details of the growth and processing techniques of freestanding inorganic crystalline semiconductors in various dimensions and their material property under strain condition. Finally, fabrication processes and opto-electrical properties of flexible optoelectronics are introduced. Future research directions are also discussed, including further enhancement of device performance, building more types of optoelectronic devices on flexible substrates, and process integration for the advanced optoelectronic circuits and systems.

Highlights

  • Optoelectronic devices such as photosensors, lightemitting devices, and photovoltaics are essential components in numerous modern applications: digital imaging, displays, motion detectors, and energy convergence systems [1]

  • We primarily reviewed the recent advances in the development of freestanding inorganic crystalline semiconductors and their manipulation technology

  • Given that research in flexible optoelectronics is in its early stage, two future research directions could be suggested to drive the flexible optoelectronics to the level

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Summary

Introduction

Optoelectronic devices such as photosensors, lightemitting devices, and photovoltaics are essential components in numerous modern applications: digital imaging, displays, motion detectors, and energy convergence systems [1]. Most of the optoelectronics use the quantum mechanical effect of light such as carrier confinement and carrier generation/recombination in semiconductors including a wide range of epitaxially grown inorganic semiconductors such as Si, Ge, III-V, and III-nitride [2] Because these semiconductors are grown from their own wafer substrates, conventional optoelectronic devices and their applications must accommodate thick, rigid, fragile, and planar form factors. The most popular methods for handling the freestanding semiconductors are (1) dispersion and spraying [19,20], (2) growth directly on metallic foils [21,22], and (3) micro-transfer printing [22] The advantage of these approaches lies in the additive process, which reduces fabrication costs and offers great freedom when designing atomic- or nanoscale semiconductor structures using a batch-wise process. Opto-electrical properties of flexible optoelectronics such as flexible photosensors, lighting devices, and photovoltaics will be introduced

Freestanding 1-dimensional nanowire semiconductors
Formation of NWs by etching followed by lift-off and transfer
Two-dimensional material
Flexible optoelectronics using 1-D semiconductors
Flexible optoelectronics using 2-D semiconductors
Quasi-Two dimensional materials
Findings
Conclusion and future perspective
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