Abstract
Vanadium doping can effectively modify the physical properties of transition metal dichalcogenides (TMDCs), broadening their application prospect in electronic, spintronic, and valleytronic devices. However, vanadium dopants always suppress the growth of TMDCs and lower the growth controllability. Here, we report the morphology-controlled growth of vanadium-doped MoS2 (V-MoS2). Both the layer-controlled growth and fractal growth of monolayer V-MoS2 were realized, and the mechanism was analyzed, including contributions from the localized concentration of Mo atoms, the etching effect, and formation energies of different terminations. It will shed light on the morphology-controlled growth of other vanadium-doped TMDCs, promoting the construction of novel devices.
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