Abstract
Irradiation is a good modification technique, which can be used to modify the electrical properties, mechanical properties, and thermal properties of polymer materials. The effects of irradiation on the electrical properties, mechanical properties, and structure of polyimide (PI) films were studied. PI films were irradiated by a 1 MeV electron, 3 MeV proton, 10 MeV proton, and 25 MeV carbon ion. Dielectric constant, dielectric loss, and resistance measurements were carried out to evaluate the changes in the electrical properties; moreover, the mechanical properties of the pristine and irradiated PI were analyzed by the tensile testing system. The irradiation induced chemical bonds and free radicals changes of the PI films were confirmed by the Fourier transform infrared (FTIR) spectra, X-ray photoelectron spectroscopy (XPS), and electron paramagnetic resonance (EPR). The dielectric constant of the PI films decreases with the increase of fluences by the four kinds of irradiation sources.
Highlights
In recent years, with the rapid development of microelectronics industry, the miniaturization of electronic components, the rapid growth of large scale integrated circuit chips, the increase of chip interconnect density, and the improvement the circuit connection of the resistance and capacitance, the signal delay of resistance production effect signal transmission speed and signal loss [1,2,3]
The dielectric constant of PI films decreases after the four kinds of irradiation sources; it decreases with the increase of the fluences
The dielectric constant of polyimide decreases with the increase of irradiation fluences in the whole frequency range
Summary
With the rapid development of microelectronics industry, the miniaturization of electronic components, the rapid growth of large scale integrated circuit chips, the increase of chip interconnect density, and the improvement the circuit connection of the resistance and capacitance, the signal delay of resistance production effect signal transmission speed and signal loss [1,2,3]. As a kind of functional material, low dielectric constant polymers have become an important research direction. As an important insulating and encapsulating material, is widely used in aerospace and microelectronic fields. Many researchers have reported that polyimide (PI) thin films with low dielectric constant are obtained by doped fluorine-containing groups, doped porous, or other introduced functional groups methods. Goto et al [4,5,6,7] successfully prepared a series of thermostable low dielectric constant polyimide (PI) by introducing diphenyl fluorine group into the main chain. Fujiwara et al [8] prepared poly(norborneolin imide) with large fluorinated aromatic groups in the side chain and confirmed that the main chain structure of fluorinated poly(norborneolin imide) showed helical structure through molecular simulation
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