Abstract
Up to now, InGaAs/InP photodiodes are the main detectors for the long-wavelength region. The dynamic behavior of these devices limits the maximum bitrate of communication systems. We have investigated the dynamic behavior of these heterojunction devices. If the heterojunction lies outside of the space charge region, the heterointerface shows an additional response due to a storage of carriers in the valley of the conduction band. At higher biases the interface lies inside the space charge region and the time response of the interface is negligible and no additional time response was observed.
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