Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy

Abstract

The operation of the recently disclosed heterojunction avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions (HI-LO SAM APD) is demonstrated. This new structure which features a doping spike in the wide gap layer offers several advantages over conventional SAM APDs (lower dark current and excess noise factor, greater gain stability). Low dark currents (≃1 nA), low voltage operation (−26 V) and gains as high as 50 at 1.60 μm are demonstrated in an Al0.48In0.52As/Ga0 47In0 53As prototype grown by molecular beam epitaxy.