Abstract
InGaAs/InP heterostructure p-i-n photodiodes and two types of InGaAs/InP avalanche photodetectors have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapor deposition. The p-i-n photodetectors are diffused p-n junction devices of 75 μm diameter and have low dark currents ( ∼ 10 nA at - 10V), good quantum efficiencies ( ∼ 50% without anti-reflectance coatings), and response times less than 40 ps. The avalanche photodiodes with separate absorption and multiplication regions (SAM APD's) have shown the two-component pulse response that is typical of this type of structure with the fast component being 100 ps and the slow component being 6ns. This slow component has been eliminated by incorporating an intermediate-band-gap transition region between the absorption and multiplication regions. The APD's exhibit low dark currents ( ∼ 32 nA at 90% of breakdown) and high-speed response ( ∼ 100 ps FWHM).
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