Abstract
The performance of uncooled InGaAs/InAlAs/InP avalanche photodiodes operating near 1.5 μm has been studied theoretically. Device modelling based on advanced drift and diffusion model with commercial software, the Crosslight APSYS, has been performed. Separate absorption, grading, charge and multiplication avalanche photodiodes with a relatively thick undepleted p-type InGaAs absorption region and thin InAlAs multiplication layer have been considered. Basic physical quantities like band diagram, optical absorption and generation have been calculated. Performance characteristics such as dark- and photo-current, photo-responsivity, multiplication gain, breakdown voltage, excess noise, frequency response and bandwidth have been simulated. Device design optimisation issues have been discussed with respect to the applicable features of the Crosslight APSYS within the framework of drift-diffusion theory. The modelling results are selectively presented and analysed. Simulations of avalanche photodiode structures enable one to increase the device quantum efficiency, reduce the dark current and eliminate impact ionization processes within absorbing layer.
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