Abstract
We report on a low dark current density P-B-i-N extended short-wavelength infrared photodetector with atomic layer deposited (ALD) A l 2 O 3 passivation based on a InAs/GaSb/AlSb superlattice. The dark current density of the A l 2 O 3 passivated device was reduced by 38% compared to the unpassivated device. The cutoff wavelength of the photodetector is 1.8µm at 300K. The photodetector exhibited a room-temperature (300K) peak responsivity of 0.44A/W at 1.52µm, corresponding to a quantum efficiency of 35.8%. The photodetector exhibited a specific detectivity (D ∗) of 1.08×1011 c m⋅H z 1/2/W with a low dark current density of 3.4×10-5 A/c m 2 under -50m v bias at 300K. The low dark current density A l 2 O 3 passivated device is expected to be used in the fabrication of extended short-wavelength infrared focal plane arrays for imaging.
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