1 mm APDs in InGaAs with InAlAs and InP multiplication layers: performance characteristics

Abstract

Large-area APDs operating in the wavelength region of 1- 1.5 micron are useful for many low light level applications. Present commercially available InGaAs based APDs are small, (<500 micron diameter size) and thus limit the field of view. We report here on low dark current density, large-area (1 mm diameter) InGaAs APDs. InGaAs APD device structures with InP and InAlAs multiplication layers were grown by metaloragnic vapor deposition method. The combination of good quality material and a proprietary passivation process yielded 1 mm APD devices with low dark current density and high gain. Devices exhibited gain as high as 30 and dark current density as low as 0.5 microamperes per square centimeter.