Abstract
A dry-etching recipe for reducing plasma damage, thought to be unavoidable during the device fabrication process (especially the gate contact window open process), is developed. The dry-etching recipe is specified with its lower plasma power and is applied to fabricating GaN high electron mobility transistor (HEMT) devices. From the measured dc electrical characteristics of the fabricated devices, it is found that this low-power etching recipe enables the fabrication of higher-performance HEMT devices without plasma damage.
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