Abstract
Gas cluster ion beam (GCIB) process has been used as a novel technique to realize very low-damage irradiations. The energy per atom of cluster ions can be reduced down to several eV/atom at several keV of total acceleration energy. In this study, size-controlled GCIB was formed using a strong permanent magnet, subsequently low-damage characteristics of large cluster ion irradiations were evaluated from the cross-sectional transmission electron microscope (TEM) observations of Si substrates. After size-controlled GCIB irradiation, the damaged or modified layer thickness was below several nm, when total acceleration energy was 5keV and Ar cluster size was larger than 5000. Result obtained from spectroscopic ellipsometry also indicated the possibility of low-damage processing by size-controlled GCIB.
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