Abstract
High-speed performance, f T > 100 GHz, at sub-milliampere collector currents is demonstrated with a laterally scaled-down InP/InGaAs heterojunction bipolar transistor (HBT) fabricated by using a combination of dry and wet etching techniques. This result indicates that small-sized InP/InGaAs HBTs are promising for low-power high-speed circuit applications. To cope with the characteristic problems of the small-sized devices, i.e. degraded current gain and increased base resistance, the influence of graded-base structure and emitter geometry on transistor performance is investigated with the result that the graded-base structure is effective for enhancing current gain, and that narrowing the emitter stripe width is effective for suppressing the increase in base resistance.
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