Abstract
Bistable bit state changes of a magnetic RAM memory cell (2/spl times/5 /spl mu/m/sup 2/) made with a highly sensitive spin valve material were performed with pulsed conductor currents I/sub W/ of 5.5 mA//spl mu/m for parallel to antiparallel and 3.0 mA//spl mu/m for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1/spl sim/2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0.5 mA due to the MR change of 3%. A threshold of I/sub W/ for the state change was decreased 20% by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
