Effective bit addressing times for precessional magnetization reversal in a magnetic memory cell

H.W Schumacher,C Chappert,R.C Sousa,P.P Freitas

doi:10.1109/intmag.2005.1463849

Effective bit addressing times for precessional magnetization reversal in a magnetic memory cell

H.W Schumacher, C Chappert + Show 2 more

https://doi.org/10.1109/intmag.2005.1463849

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Publication Date: Jan 1, 2005

Affiliation: Physikalisch-Technische Bundesanstalt, University of Paris-Sud, French National Centre for Scientific Research, Institute for Systems Engineering and Computers

#Magnetic Memory Cell #Magnetic Random Access Memory Cells + Show 8 more

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Abstract

The effective bit addressing times for precessional magnetization reversal in magnetic random access memory cells is studied. Different addressing times /spl tau//sub S/ for switching and /spl tau//sub NS/ for non-switching are studied using a magneto transport setup. The ultra fast magnetisation dynamics of the free layer is accessed by reading out the tunnelling magneto resistance (TMR) response of the cell using a fast sampling oscilloscope. From the measured TMR, the time evolution of the easy axis magnetization component m/sub x/ of the free layer is derived. Bit addressed switching of the free layer is studied by application of a fast perpendicular field pulse in combination with an easy axis bias field.

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