Abstract
A novel magnetic random access memory (MRAM) cell consisting of a magnetic tunnel junction (MTJ) and negative differential resistance (NDR) device connected in parallel is described. The NDR characteristics are used to increase the effective magnetoresistance (MR) ratio of the MTJ. Circuit simulations were performed for the memory cell with a triple-barrier resonant-tunneling diode (RTD) to confirm the efficacy of the basic operation. Furthermore, a hybrid circuit built from the CoFe-based MTJ and GaAs-based interband tunnel diode was fabricated. The circuit showed that the effective MR ratio was enhanced almost tenfold from its original value of 11% to 103%.
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