Abstract

InP-based monolithically integrated pin/HBT photoreceiver arrays with novel on-chip shielding, to reduce electrical and optical crosstalk, have been fabricated and characterised. The photoreceiver array with on-chip plated gold shielding demonstrated an adjacent-channel crosstalk of < –40 dB, which represents a 17 dB reduction compared to –23 dB in an array without such shielding. The arrays demonstrate bandwidths of 5–7 GHz.

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