Abstract
This paper reports a photoconductive type (Ag/Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> SnS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (CTS) QDs/Ag) Vis-NIR photodetector having small channel spacing ( ~ 63.3 μm) on glass substrate. The low cost solvothermal processed CTS QDs have been used as carrier transporter as well as broad light absorber. The optical parameters of the proposed structure for small illumination power density have been calculated for broad range light illumination wavelengths (650-1100 nm). The responsivity of device was found to be ~37 (mA/W) for visible (730 nm) and ~67 (mA/W) for NIR (940 nm) illumination wavelengths. The sensitivity of the device was observed to be ~2.28 and ~8.2 for 730 and 940 nm illumination wavelengths, respectively, at 5V. The time response of the device have been measured under Vis-NIR illumination and found to be ~0.96 s (rise time) and ~1.29 s (fall time).
Published Version
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